Method of processing silicon wafer

Details Method of processing silicon wafer Method of processing silicon wafer

2004-05-27

2009-10-13

Sarkar, Asok K (Department: 2891)

Semiconductor device manufacturing: process

Chemical etching

Combined with the removal of material by nonchemical means

C216S088000, C216S089000, C257SE21219, C257SE21230, C257SE21237, C438S460000, C438S745000, C438S747000, C438S750000, C438S753000

Reexamination Certificate

active

07601642

ABSTRACT:
The inventive method for processing a silicon wafer is a method comprising step11in which a single crystal ingot is sliced into thin disc-like wafers; step13in which the surface of each wafer is lapped to be planar; step14in which the wafer is subjected to alkaline cleaning to be removed of contaminants resulting from preceding machining; and step16in which the wafer is alternately transferred between two groups of etching tanks one of which contain acidic etching solutions and the other alkaline etching solutions, wherein an additional step12is introduced between step11and step13in which a wafer is immersed in an acidic solution containing hydrofluoric acid (HF) and nitric acid (HNO3) at a volume ratio of ⅛ to ½ (HF/HNO3) so that degraded superficial layers occurring on the front and rear surfaces of the wafer as a result of machining can be removed and the edge surface of the wafer can be beveled.The inventive method simplifies the steps involved in the processing of a wafer, and reduces the intervention of alkaline cleaning accompanied with mechanical beveling, thereby reducing the risk of contamination due to metal impurities which may result from alkaline cleaning.

REFERENCES:
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patent: 2004/0108297 (2004-06-01), Erk et al.
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Fumio Shimura, Fig. 3.1, Handotai Silicon Kessho Kogaku (Semiconductor Silicon Crystal Engineering), published by Maruzen Co., Ltd., Sep. 30, 1993, p. 104, accompanied by an English language translation.
English language Abstract of JP 10-112450.
English Abstract of the appeal decision; Re Korean Patent Application No. 10-2005-7022436.

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