Thin film transistor

Details Thin film transistor Thin film transistor

1998-09-03

2000-03-21

Chang, Joni

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

438233, 438656, H01L 21339

Patent

active

060402067

ABSTRACT:
A thin film transistor of this invention includes: a source and drain regions formed on an insulating base region; and a conductive layer connected to the source and drain regions. The conductive layer has a layered structure of an Al-containing metal film and an N-containing Mo film.

REFERENCES:
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patent: 5367179 (1994-11-01), Mori et al.
patent: 5604360 (1997-02-01), Zhang et al.
patent: 5811835 (1998-09-01), Seiki et al.
Y. Ozaki et al., Japanese Laid-Open Patent Publication No. 6-104241, Laid Open on Apr. 15, 1994, with partial English translation.

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