Thin film thickness mapping technique

Details Thin film thickness mapping technique Thin film thickness mapping technique

1990-09-17

1991-11-05

Gregory, Bernarr E.

Radiant energy

Inspection of solids or liquids by charged particles

Methods

250306, 250310, G01N 2302

Patent

active

H00009938

ABSTRACT:
A narrow, high energy, electron beam is caused to impinge upon an integra circuit. The accelerating voltage of the electron beam is increased until the electrons have just enough energy to penetrate through the thickness of the passivation layer of the integrated circuit. The accelerating voltage is then increased a predetermined amount (3-5 KeV) above the voltage required for passivation layer penetration. The transmitted electrons interact with the sublayer of thin film material and generate distinct X-rays. The increased-intensity electron beam is x/y or raster scanned over the area of interest of the integrated circuit. The X-ray intensities generated during the raster scan are detected and stored. After a complete scan of the area of interest, the X-ray intensities are read, processed through a formula that compensates for absorption effects, and visually displayed. Through correlation of measured and predicted X-ray intensities, a three dimensional scanning thickness map is available for display and/or quantitative analysis of the thickness profile of the integrated circuit.

REFERENCES:
patent: H589 (1989-02-01), Sartore
patent: 4777364 (1988-10-01), Sartore

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