Thin-film structure with tapered feature

Details Thin-film structure with tapered feature Thin-film structure with tapered feature

1994-04-28

1996-06-18

Saadat, Mahshid

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified configuration

257412, 257350, 257766, 257773, 257920, H01L 2348, H01L 2352, H01L 2976, H01L 2701

Patent

active

055280820

ABSTRACT:
A feature in a thin-film structure such as an AMLCD array has an edge with a tapered sidewall profile, reducing step coverage problems. The feature can be produced by producing a layer in which local etch rates vary in the thickness direction of the layer. The layer can then be etched to produce the feature with the tapered sidewall profile. The layer can be produced by physical vapor deposition. The layer can, for example, includes sublayers with different etch rates, either due to different atomic proportions of constituents or due to different etchants. Or local etch rates can vary continuously as a result of changing deposition conditions. Differences in etch rates or differences in etchant mixtures can be used to obtain a desired angle of elevation.

REFERENCES:
patent: 4782380 (1988-11-01), Shankar et al.
patent: 5132745 (1992-07-01), Kwasnick
patent: 5162933 (1992-11-01), Kakuda et al.
patent: 5324674 (1994-06-01), Possin et al.
patent: 5436201 (1995-07-01), Chi et al.
Ichikawa, K., Suzuki, S., Matino, H., Aoki, T., Higuchi, T., Oana, Y., "14.3-in.-Diagonal 16-Color TFT-LCD Panel Using a Si:H TFTs, " SIDS 93 Digest, 1989, pp. 226-229.
Kobayashi, K., Hayama, M., Nakagawa, N., Ishibashi, T., Maejima, T., Yamazaki, T., "Fabrication of 10-in.-diagonal 16-gray-level TFT-LCDs by novel processing technologies",Journal of the SID,Vol. 1, No 1, 1993, pp. 67-73.

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