Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Patent
1994-04-28
1997-12-02
Brown, Peter Toby
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
257764, 257766, 257775, H01L 23532
Patent
active
056939833
ABSTRACT:
A conductive line in a thin-film structure such as an AMLCD array includes molybdenum and chromium so that it can be processed in a manner similar to chromium but has a greater conductivity than chromium due to the molybdenum. The conductive line can be produced by physical vapor deposition of a layer of a molybdenum-chromium (MoCr) alloy, which can then be masked and etched using photolithographic techniques in a manner similar to chromium. Proportions between 15 and 85 atomic percent of molybdenum can be processed more easily than pure molybdenum and are more conductive than pure chromium. Lines with between 40 and 60 atomic percent molybdenum can be used with a margin of error. To produce a tapered conductive line, sublayers of MoCr alloys with different etch rates can be produced and etched.
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Allen, deceased Robert R.
Chuang Tzu-Chin
Ho Jackson H.
Brown Peter Toby
Xerox Corporation
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