Thin film structure, capacitor, and methods for forming the...

Semiconductor device manufacturing: process – Making passive device – Stacked capacitor

Reexamination Certificate

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C438S591000, C438S778000, C257S532000, C257SE29343

Reexamination Certificate

active

11046876

ABSTRACT:
A thin film structure and a capacitor using the film structure and methods for forming the same. The thin film structure may include a first film formed on a substrate using a first reactant and an oxidant for oxidizing the first reactant. A second film may be formed on the first film to suppress crystallization of the first film. A capacitor may include a dielectric layer, which may further include the first thin film and the second thin film.

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patent: 10-2001-0082118 (2001-08-01), None
patent: 10-2004-0016779 (2004-02-01), None
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patent: 1020040084700 (2004-10-01), None

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