Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – Insulative material deposited upon semiconductive substrate
Reexamination Certificate
2008-10-08
2010-11-23
Ridley, Basia (Department: 1795)
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
Insulative material deposited upon semiconductive substrate
C438S097000, C438S486000, C438S491000, C438S513000, C136S255000, C136S258000, C136S261000
Reexamination Certificate
active
07838442
ABSTRACT:
A method for producing a solar cell including the steps of forming a p-type microcrystalline silicon oxide layer on a glass substrate using a PECVD method and raw gases comprising Silane gas, Diborane gas, Hydrogen gas and Carbon Dioxide gas. The method may employ a frequency of between about 13.56-60 MHz. The PECVD method may be performed at a power density of between about 10-40 mW/cm2and a pressure of between about 0.5-2 Torr, and with a ratio of Carbon Dioxide to Silane of between about 0.10-0.24; a ratio of Diborane to Silane of 0.10 or less, and a ratio of Silane to Hydrogen of 0.01 or less. A tandem solar cell structure may be formed by forming top and bottom layers by the method described above, and placing the top layer over the bottom layer.
REFERENCES:
patent: 5507881 (1996-04-01), Sichanugrist et al.
patent: 5824566 (1998-10-01), Sano et al.
patent: 5853498 (1998-12-01), Beneking et al.
patent: 5913986 (1999-06-01), Matsuyama
patent: 2004/0221887 (2004-11-01), Kondo et al.
patent: 2006/0043517 (2006-03-01), Sasaki et al.
patent: 0 631 327 (1994-12-01), None
patent: 5175528 (1993-07-01), None
patent: 2004-247607 (2004-02-01), None
Barua et al., “Improvement in the conversion efficiency of single and doulbe junction a-Si solar cells by using high quality p-SiO:H window layer and seed layer/thin n-mc-Si:H bilayer”, IEEE 2000, pp. 829-830.
Sarker et al., “The Growth of Crystallinity in Undoped SiO:H Films at Low RF-Power Density and Substrate Temperature”, The Japan Society of Applied Physics, vol. 40 (2001), pp. L94-L96.
Pingate Nirut
Sichanugrist Porponth
Yotsaksri Decha
Baker & Daniels LLP
National Science and Technology Development Agency
Ridley Basia
Trinh Thanh-Truc
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