Thin-film shape memory alloy device and method

Chemistry: electrical and wave energy – Processes and products – Coating – forming or etching by sputtering

Reexamination Certificate

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C204S192120, C216S041000, C216S096000, C216S100000

Reexamination Certificate

active

07981258

ABSTRACT:
A thin film device, such as an intravascular stent, is disclosed. The device is formed of a seamless expanse of thin-film (i) formed of a sputtered nitinol shape memory alloy, defining, in an austenitic state, an open, interior volume, having a thickness between 0 5-50 microns, having an austenite finish temperature Afbelow 37° C.; and demonstrating a stress/strain recovery greater than 3% at 37° C. The expanse can be deformed into a substantially compacted configuration in a martensitic state, and assumes, in its austenitic state, a shape defining such open, interior volume. Also disclosed is a sputtering method for forming the device.

REFERENCES:
patent: 6013854 (2000-01-01), Moriuchi
patent: 6169269 (2001-01-01), Maynard
patent: 6379383 (2002-04-01), Palmaz et al.
patent: 6533905 (2003-03-01), Johnson et al.
patent: WO 99/62432 (1999-12-01), None
Yang et al. “Transformations in sputter-deposited thin films of NiTi shape memory alloy” Materials Letters 22 (Feb. 1995) pp. 137-140.

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