Chemistry: electrical and wave energy – Processes and products – Coating – forming or etching by sputtering
Reexamination Certificate
2011-07-19
2011-07-19
McDonald, Rodney G (Department: 1724)
Chemistry: electrical and wave energy
Processes and products
Coating, forming or etching by sputtering
C204S192120, C216S041000, C216S096000, C216S100000
Reexamination Certificate
active
07981258
ABSTRACT:
A thin film device, such as an intravascular stent, is disclosed. The device is formed of a seamless expanse of thin-film (i) formed of a sputtered nitinol shape memory alloy, defining, in an austenitic state, an open, interior volume, having a thickness between 0 5-50 microns, having an austenite finish temperature Afbelow 37° C.; and demonstrating a stress/strain recovery greater than 3% at 37° C. The expanse can be deformed into a substantially compacted configuration in a martensitic state, and assumes, in its austenitic state, a shape defining such open, interior volume. Also disclosed is a sputtering method for forming the device.
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Yang et al. “Transformations in sputter-deposited thin films of NiTi shape memory alloy” Materials Letters 22 (Feb. 1995) pp. 137-140.
Bose Arani
Gupta Vikas
Johnson A. Davis
Martynov Valery V.
McDonald Rodney G
Stryker Corporation
Stryker NV Operations Limited
TiNi Alloy Company
Vista IP Law Group LLP
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