Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1995-05-24
2000-09-12
Prenty, Mark V.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257410, 257411, 257616, H01L 2701
Patent
active
06118151&
ABSTRACT:
A thin film semiconductor device includes: a substrate having an insulating surface; a semiconductor layer containing silicon and germanium formed on the substrate; a gate insulating film formed on the semiconductor layer; and a gate electrode formed on the gate insulating film, wherein the gate insulating film includes a thermal oxide film formed by thermally oxidizing a surface of the semiconductor layer.
REFERENCES:
patent: 4442449 (1984-04-01), Lehrer et al.
patent: 5241214 (1993-08-01), Herbots et al.
patent: 5250818 (1993-10-01), Saraswat et al.
patent: 5461250 (1995-10-01), Burghartz et al.
patent: 5468987 (1995-11-01), Yamazaki et al.
patent: 5561302 (1996-10-01), Candelaria
patent: 5602403 (1997-02-01), Aklufi
S.-G. Park et al., "Kinetics and Mechanism of Wet Oxidation of Ge.sub.x Si.sub.1-x Alloys" Journal of Applied Physics, vol. 75, No. 3, pp. 1764-1770 (Feb. 1, 1994).
H. Okada et al., "High-Mobility Amorphous-Silicon MOS Transistors", Japanese Journal of Applied Physics, Part 2 (Letters), vol. 25, No. 9, pp. L718-L721 (Sep. 1986).
Huang-Chung Cheng et al., "Characteristics of Polycrystalline Silicon Thin-Film Transistors with Thin Oxide/Nitride Gate Structures", Optical Engineering, vol. 32, No. 8, pp. 1798-1802 (Aug. 1993).
H. Tsutsu et al., "Oxidation of Polycrystalline-SiGe Alloys", Applied Physics Letters, vol. 64, No. 3, pp. 297-299 (1994). Jan. 1994.
H. Tsutsu et al., "Oxidation of Epitaxial- and Polycrystalline-SiGe Alloys", Mat. Res. Soc. Symp. Proceedings Reprint, vol. 326, pp. 227-232 (1994). Dec. 1994.
T.J. King et al., "A polycrystalline-Si.sub.1-x Ge.sub.x -Gate CMOS Technology", IEDM 90, pp. 253-256 (1990). Dec. 1990.
T.J. King et al., "A Low-Temperature (.ltoreq. 550.degree. C.) Silicon-Germanium MOS Thin-Film Transistor Technology for Large-Area Electronics", IEDM 91, pp. 657-570 (1991). Dec. 1991.
T.J. King et al., "PMOS Transistors in LPCVD Polycrystalline Silicon-Germanium Films", IEEE Electron Device Letters, vol. 12, No. 11 pp. 584-586 (1991). Nov. 1991.
H. Ohshima et al., "Full-Color LCDs with Completely Integrated Drivers Utilizing Low-Temperature Poly-Si TFTs", SID 93 Digest, pp. 387-390 (1993). Dec. 1993.
G. Kawachi et al., "Large Area Doping Process for Fabrication of the p-Si TFT's Using Bucket Ion Source and XeCl Excimer Laser Annealing", Extented Abstracts of the 22nd (1990 International) Conference on Solid State Devices and Materials, Sendai, pp. 971-974 (1990). Dec. 1990.
A. Yoshida et al., "Fabrication of a-Si: H TFT's by a Large Area Ion Doping Technique", Extended Abstracts of the 22nd (1990 International) Conference on Solid State Devices and Materials, Sendai, pp. 1197-1198 (1990). Dec. 1990.
W.J. Edwards et al., "Diffusion of Ge Along Grain Boundaries During Oxidation of Polycrstalline Silicon-Germanium Films", Mat. Res. Soc. Symp. Proceedings Reprint, vol. 319, pp. 183-188 (1994). Dec. 1994.
Matsushita Electric - Industrial Co., Ltd.
Prenty Mark V.
LandOfFree
Thin film semiconductor device, method for fabricating the same does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Thin film semiconductor device, method for fabricating the same , we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Thin film semiconductor device, method for fabricating the same will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-98442