Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-01-25
2005-01-25
Dang, Phuc T. (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S334000, C257S368000
Reexamination Certificate
active
06847069
ABSTRACT:
A thin-film semiconductor device is provided in which an island region of an isolated single-crystal thin-film is formed on an entire surface or within a specific region of an insulating film by utilizing cohesion phenomena due to the surface tension of a melted semiconductor, wherein more than one active region of a thin-film transistor is formed in the island region.
REFERENCES:
patent: 6580122 (2003-06-01), Wristers et al.
patent: 6602761 (2003-08-01), Fukunaga
patent: A-11-121753 (1999-04-01), None
patent: A-2000-243970 (2000-09-01), None
Hatano Mutsuko
Park Seong-Kee
Shiba Takeo
Yamaguchi Shin'ya
Antonelli Terry Stout & Kraus LLP
Dang Phuc T.
Hitachi , Ltd.
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