Thin-film semiconductor device, manufacturing method of the...

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

Reexamination Certificate

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C257S334000, C257S368000

Reexamination Certificate

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06847069

ABSTRACT:
A thin-film semiconductor device is provided in which an island region of an isolated single-crystal thin-film is formed on an entire surface or within a specific region of an insulating film by utilizing cohesion phenomena due to the surface tension of a melted semiconductor, wherein more than one active region of a thin-film transistor is formed in the island region.

REFERENCES:
patent: 6580122 (2003-06-01), Wristers et al.
patent: 6602761 (2003-08-01), Fukunaga
patent: A-11-121753 (1999-04-01), None
patent: A-2000-243970 (2000-09-01), None

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