Thin film semiconductor device including a driver and a matrix c

Details Thin film semiconductor device including a driver and a matrix c Thin film semiconductor device including a driver and a matrix c

1994-08-09

1995-12-19

Meier, Stephen D.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257348, H01L 2904

Patent

active

054770734

ABSTRACT:
A thin film transistor including a thin semiconductor film which has a central portion as a channel region, with the side portions of the semiconductor film except for the channel region being a source and a drain regions which includes n-type impurities such as phosphorus ions of high concentration (3.times.10.sup.15 atoms/cm.sup.2), and a low concentration region provided between the channel region and each of the source and drain regions including p-type impurities such as boron ions of a low concentration (1.times.10.sup.13 atoms/cm.sup.2) whereby the low concentration region serves to reduce the off current.

REFERENCES:
patent: 5210438 (1993-05-01), Nakamura

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