Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Patent
1996-09-24
1998-09-08
Niebling, John
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
438486, 148DIG16, 257 65, H01L 2100
Patent
active
058044736
ABSTRACT:
A method for fabricating a thin film semiconductor device includes the steps of introducing, into an amorphous film of a semiconductor material, at least one metallic element that forms an intermetallic compound with the semiconductor material and at least one nonmetallic element selected from group VIa elements, group VIIa elements or nitrogen, and crystallizing the amorphous film, after introducing the metallic element and the nonmetallic element, by a thermal annealing process, to convert the amorphous film to a crystalline film.
REFERENCES:
patent: 5581092 (1996-12-01), Takemura
Fumiya Oki et al., "Effect of Deposited Metals on the Crystallization Temperature of Amorphous Germanium Film" Japanese Journal of Applied Physics, vol. 8, 1969, p. 1056, month not available.
S.F. Gong et al., "Al-doped and Sb-doped polycrystalline silicon obtained by means of metal-induced crystallization" Journal of Applied Physics, vol. 62, No. 9, pp. 3726-3732 Nov. 1987.
R.Rizk et al., "Electrical and structural studies of copper and nickel precipitates in a .SIGMA.=25 silicon bicrystal" Journal of Applied Physics, vol. 76, No. 2, pp. 952-958 Jul., 1994.
Seok-Woon Lee et al., "Low Temperature Poly-si Thin-Film Transistor Fabrication by Metal-Induced Lateral Crystallization" IEEE EDL vol. 17, No. 4, pp. 160-162, Apr. 1996.
Dong Kyun Sohn et al., "New Crystallization Process of LPCVD a-Si Films below 530.degree. C Using Metal Adsorption Method" Abstracts of the 1995 International Conference on Solid State Devices and Materials, Osaka, 1995 pp. 902-904 month not available.
Yunosuke Kawazu et al., "Low-Temperature Crystallization of Hydrogenated Amorphous Silicon Induced by Nickel Silicide Formation" Japanese Journal of Applied Physics, vol. 29, No. 12, pp. 2698-2704, Dec., 1990.
B. Mohadjeri et al., "Nickel-Enhanced Solid-Phase Epitaxial Regrowth of Amorphous Silicon" Physical Review Letters, vol. 68, No. 12, pp. 1872-1875, Mar., 1992.
Handbook of crystal growth, vol.3, edited by D.T.J. Hurle, 1994, p. 282 month not available.
Lars G. Hultman et al., "Crystallization of Amorphous Silicon During Thin Film Gold Reaction" Metal Research Society Simposium Proceedings, vol. 54, 1986, pp. 109-114 month not available.
Lars G. Hultman et al., "Crystallization of Amorphous Silicon During Thin Film Gold Reaction" Journal of Applied Physics, vol. 62, No. 9, pp. 3647-3655, Nov., 1987.
R.C.Cammarata et al., "Silicide precipitation and silicon crystallization in nickel implanted amorphous silicon thin films" Journal of Material Science and Research, vol. 5, No. 10, pp. 2133-2138, Oct. 1990.
G. Radnoczi et al., "Al induced crystallization of a-Si" Journal of Applied physics, vol. 69, No. 9, pp. 6394-6399, May 1991.
E. Nygren et al., "Impurity-stimulated crystallization and diffusion in amorphous silicon" Applied Physics Letters, vol. 52, No. 6, pp. 439-441, Feb., 1988.
C. Hayzelden et al., "In situ transmission electron microscopy studies of silicide-mediated crystallization of amorphous silicon" Appl. Phys. Lett., vol. 60, No. 2, pp. 225-227, Jan., 1992.
Fujitsu Limited
Mee Brendan
Niebling John
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