Thin film semiconductor device having a gate electrode...

Details Thin film semiconductor device having a gate electrode... Thin film semiconductor device having a gate electrode...

2006-06-27

2006-06-27

Smith, Zandra V. (Department: 2822)

Semiconductor device manufacturing: process

Formation of semiconductive active region on any substrate

Polycrystalline semiconductor

C438S150000, C438S487000

Reexamination Certificate

active

07067404

ABSTRACT:
A thin film semiconductor device includes a gate electrode insulator formed through high-heat oxidization of a semiconductor film. The high-heat oxidization of semiconductor film is carried out, in the process of crystallization or recrystallization of non-single-crystalline semiconductor thin film on a base layer, by irradiating predetermined areas of the thin film which is implanted with oxygen ion before irradiation, to convert such areas to oxidized areas, and these areas are processed to gate electrode insulators of electric circuit units in the thin film semiconductor device.

REFERENCES:
patent: 5512494 (1996-04-01), Tanabe
patent: 6222253 (2001-04-01), Sadana et al.
patent: 6458636 (2002-10-01), Yi et al.
patent: 6746942 (2004-06-01), Sato et al.
patent: 5-267665 (1993-10-01), None
patent: 2001-237430 (2001-08-01), None

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