Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Patent
1995-07-14
1997-11-11
Carroll, J.
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Heterojunction
257 19, 257 21, 257 22, 257 55, 257 63, 257 65, 257 77, 257613, H01L 2912
Patent
active
056867344
ABSTRACT:
A high performance thin film semiconductor device having a heterojunction such as a photoelectric conversion device is disclosed. In accordance with the present invention, the thin film semiconductor device comprises a thin semiconductor layer which forms a heterojunction with a non-single crystal silicon layer or non-single crystal silicon-germanium layer, wherein the valence band discontinuity at the heterointerface arising from the difference in optical energy bandgap is as small as 0.3 eV or less and wherein the thin semiconductor layer has an optical energy bandgap greater than 2.8 eV, so that hole transport performance may not be degraded. Such a thin semiconductor layer may be formed by using silane gas and methane gas with a flow rate ratio greater than 30 at a deposition rate less than 0.5 .ANG./sec.
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Atoji Tadashi
Hamakawa Yoshihiro
Okamoto Hiroaki
Sugawa Shigetoshi
Canon Kabushiki Kaisha
Carroll J.
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