Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2005-12-06
2005-12-06
Phung, Anh (Department: 2824)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C438S154000, C438S163000
Reexamination Certificate
active
06972221
ABSTRACT:
In a semiconductor device having an N-channel MOS transistor and a P-channel MOS transistor, each of the N-channel and P-channel MOS transistors is made up of a polycrystal silicon layer, a gate insulating film, and a gate electrode containing a gate polysilicon on a glass substrate. A method of manufacturing the semiconductor device includes the steps of injecting an impurity into the gate polysilicon at a same time as or in a different step of impurity injection at a time of formation of source/drains of the MOS transistors or formation of an LDD (Lightly Doped Drain), to make an N-type of a gate polysilicon in the N-channel MOS transistor and make a P-type of a gate polysilicon in the P-channel MOS transistor and, furthermore, setting a thickness of the polycrystal silicon layer less than the width of a depletion layer which occurs when an inversion channel is formed. Thus, fluctuations in values of threshold voltages of the MOS transistors are reduced to realize low-voltage driving.
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NEC Corporation
Phung Anh
Sughrue & Mion, PLLC
Wilson Christian D.
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