Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1991-04-10
1993-02-16
Hille, Rolf
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
359 54, 359 59, 252 4, 252 61, H01L 2701
Patent
active
051875519
ABSTRACT:
A thin film semiconductor device and a liquid crystal display apparatus are provided wherein the thin film semiconductor device having light irradiated thereon is cut off by a conductor layer, and the ight can be prevented from reaching the semiconductor layer. As a result, the generation of carriers due to optical excitation does not occur and the off current can be reduced. Because there is no area where electric field intensity in an opposed direction to the source electrode and the drain electrode is weaker than the electric field intensity of the channel region in the semiconductor layer, even after an operation for a prolonged duration under the irradiation of light, carriers generated by optical excitation are not accumulated in the semiconductor layer, and the probability of trapping for the carriers into a gate insulating film is quite low, and therefore variations in the characteristics of the thin film semiconductor device are negligibly small. The liquid crystal display apparatus using the thin film semiconductor can restrict such deteriorations of display quality as the degradation of contrast and uniformity.
REFERENCES:
patent: 4599246 (1986-07-01), Harajiri et al.
patent: 4601097 (1986-07-01), Shimbo
patent: 5017984 (1991-05-01), Tanaka et al.
patent: 5051800 (1991-09-01), Shoji et al.
Hamada Hiroshi
Hirobe Toshihiko
Kato Hiroaki
Shoji Hajime
Takemoto Toshio
Hille Rolf
Sharp Kabushiki Kaisha
Tran Minhloan
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