Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Patent
1998-04-23
2000-10-17
Tran, Andrew
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
438152, 438166, H01L 2100
Patent
active
061330736
ABSTRACT:
The present invention is related to a thin film semiconductor which can be regarded as substantially a single crystal and a semiconductor device comprising an active layer formed by the thin film semiconductor. At least a concave or convex pattern is formed intentionally on a insulating film provided in contact with the lower surface of an amorphous silicon film, whereby at least a site is formed in which a metal element for accelerating crystallization can be segregated. Therefore, a crystal nuclei is selectively formed in a portion where the concave or convex pattern is located, which carries out controlling a crystal diameter. Thus, a crystalline silicon film is obtained. A crystallinity of the crystalline silicon film is improved by the irradiation of a laser light or an intense light having an energy equivalent to that of the laser light, whereby a monodomain region in which no grain boundary substantially exit is formed.
REFERENCES:
patent: 4712874 (1987-12-01), Sekimura et al.
patent: 5576870 (1996-11-01), Ohmae
patent: 5858823 (1999-01-01), Yamazaki et al.
patent: 5886366 (1999-03-01), Yamazaki et al.
patent: 5893730 (1999-04-01), Yamazaki
Fukunaga Takeshi
Koyama Jun
Miyanaga Akiharu
Yamazaki Shunpei
Lebentritt Michael S.
Semiconductor Energy Laboratory Co,. Ltd.
Tran Andrew
LandOfFree
Thin film semiconductor and method for manufacturing the same, s does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Thin film semiconductor and method for manufacturing the same, s, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Thin film semiconductor and method for manufacturing the same, s will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-467774