Thin film resonator and method for manufacturing the same

Details Thin film resonator and method for manufacturing the same Thin film resonator and method for manufacturing the same

2005-02-01

2005-02-01

Nelms, David (Department: 2818)

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Physical stress responsive

C310S349000

Reexamination Certificate

active

06849475

ABSTRACT:
A thin film resonator having enhanced performance and a manufacturing method thereof are disclosed. The thin film resonator includes a supporting means, a first electrode, a dielectric layer and a second electrode. The supporting means has several posts and a supporting layer formed on the posts. The first electrode, the dielectric layer and the second electrode are successively formed on the supporting layer. The thin film resonator is exceptionally small and can be highly integrated, and the thickness of the dielectric layer of the resonator can be adjusted to achieve the integration of multiple bands including radio, intermediate and low frequencies. Also, the thin film resonator can minimize interference and has ideal dimensions because of its compact substrate, making the thin film resonator exceptionally small, yet comprising a three-dimensional, floating construction.

REFERENCES:
patent: 5449953 (1995-09-01), Nathanson et al.
patent: 6187717 (2001-02-01), Wikborg et al.
patent: 6307450 (2001-10-01), Takahashi et al.
patent: 6355498 (2002-03-01), Chan et al.
patent: 6710681 (2004-03-01), Figueredo et al.
patent: 01-083574 (2001-09-01), None

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