Thin film resistors integrated at a single metal...

Details Thin film resistors integrated at a single metal... Thin film resistors integrated at a single metal...

2007-04-10

2007-04-10

Fourson, George (Department: 2823)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S358000, C257S516000, C257SE27016, C257SE27035, C257SE27047, C438S358000, C438S384000

Reexamination Certificate

active

11239253

ABSTRACT:
An integrated circuit structure includes a first dielectric layer disposed on a semiconductor layer, a first thin film resistor disposed on the first dielectric layer, a second dielectric layer disposed on the first dielectric layer and the first thin film resistor, and a second thin film resistor disposed on the second dielectric layer. A first layer of interconnect conductors is disposed on the second dielectric layer and includes a first interconnect conductor contacting a first contact area of the first thin film resistor, a second interconnect conductor contacting a second contact area of the first thin film resistor, and a third interconnect conductor electrically contacting a first contact area of the second thin film resistor. A third dielectric layer is disposed on the second dielectric layer. A second layer of interconnect conductors is disposed on the third dielectric layer including a fourth interconnect conductor for contacting the second interconnect conductor. A fifth interconnect conductor of the first layer of interconnect conductors contacts the circuit element.

REFERENCES:
patent: 4019168 (1977-04-01), Collins
patent: 5976944 (1999-11-01), Czagas et al.

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