Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Passive components in ics
Patent
1997-08-01
2000-05-30
Thomas, Tom
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Passive components in ics
257536, 438382, H01L 2900
Patent
active
060693983
ABSTRACT:
A resistor is formed between devices in an integrated circuit by forming a patterned trench in an intralayer dielectric (ILD) deposited over the devices, filling the trench with polysilicon and planarizing the polysilicon. The resistance of the resistor is defined by determining and selecting the size and form of the trench including the width, length, depth and orientation of the trench. In some embodiments, the resistance of the resistor is also controlled by adding selected amounts and species of dopants to the polysilicon. In some embodiments, the resistance is controlled by directly saliciding the polysilicon in the trench.
REFERENCES:
patent: 3906255 (1975-09-01), Mensch, Jr.
patent: 4426658 (1984-01-01), Gontowski, Jr.
patent: 4902637 (1990-02-01), Kondou et al.
patent: 4916507 (1990-04-01), Boudou et al.
patent: 4939568 (1990-07-01), Kato et al.
patent: 5079670 (1992-01-01), Tigelaar et al.
patent: 5128745 (1992-07-01), Takasu et al.
patent: 5275963 (1994-01-01), Cederbaum et al.
patent: 5426072 (1995-06-01), Finnila
patent: 5661325 (1997-08-01), Hayashi et al.
patent: 5683939 (1997-11-01), Schrantz et al.
patent: 5726474 (1998-03-01), Miller et al.
patent: 5751050 (1998-05-01), Ishikawa et al.
patent: 5838044 (1998-11-01), Chang et al.
patent: 5841160 (1998-11-01), Nakamura
patent: 5869859 (1999-02-01), Hanagasaki
patent: 5869861 (1999-02-01), Chen
patent: 5972788 (1999-10-01), Ryan et al.
IBM Technical BUIletin, High Capacitance Tungsten to metal 1 capacitor for high frequency applications, vol. 38, No. 02, Feb. 1995.
Gardner Mark I.
Hause Frederick N.
Kadosh Daniel
Advanced Micro Devices , Inc.
Koestner Ken J.
Nadav Ori
Thomas Tom
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