Thin film piezoelectric element, method of manufacturing the...

Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Physical deformation

Reexamination Certificate

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C360S294400, C257S254000

Reexamination Certificate

active

07064401

ABSTRACT:
Two piezoelectric thin films each sandwiched between a main electrode layer and an opposite electrode layer are laminated in pairs so as to form a thin film piezoelectric element. An electrode leading area has a region in which the main electrode layer partially projects from the piezoelectric thin film, and another region in which only an insulating layer is formed on a part of the opposite electrode layer. At least one of a first opening formed through the insulating layer in the former region and a second opening formed through the insulating layer in the latter region is provided. A connection wiring for connecting to the opposite electrode layer or the main electrode layer and leading to the surface layer is formed via the opening.

REFERENCES:
patent: 6897503 (2005-05-01), Otani et al.
patent: 2003/0155845 (2003-08-01), Uchiyama et al.
patent: 2003/0223155 (2003-12-01), Uchiyama
patent: 2005/0040454 (2005-02-01), Kita
patent: 6-224483 (1994-08-01), None
patent: 7-30163 (1995-01-01), None
patent: 8-88419 (1996-04-01), None
patent: 8-242023 (1996-09-01), None
patent: 11-142753 (1999-05-01), None
Y. Uematsu, “Switching to super-high TPI and piggy-back actuator”, IDEMA Japan News No. 32, pp. 4-7 (with partial translation).

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