Thin film panel and method of manufacturing the same

Details Thin film panel and method of manufacturing the same Thin film panel and method of manufacturing the same

2006-06-30

2010-06-29

Tran, Minh-Loan T (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Non-single crystal, or recrystallized, semiconductor...

Amorphous semiconductor material

C257S048000, C257S072000, C257SE23011, C257SE23143, C257SE23145, C257SE23179, C257SE21521, C257SE23168, C257SE23169, C257SE21524, C257SE23170, C257SE27100, C257SE27116, C349S139000, C349S143000, C349S149000, C349S192000, C349S054000

Reexamination Certificate

active

07745823

ABSTRACT:
A thin film panel is provided, which includes a first signal line and a second signal line crossing the first signal line and formed on a different layer from the first signal line. The second signal line includes an expansion having an enlarged area and at least one cutout, and is disposed adjacent to a crossing region where the second signal line crosses the first signal line.

REFERENCES:
patent: 5473261 (1995-12-01), Marumoto et al.
patent: 6287899 (2001-09-01), Park et al.
patent: 6404473 (2002-06-01), Kaneko et al.
patent: 2004/0022044 (2004-02-01), Yasuoka et al.
patent: 2004/0095549 (2004-05-01), Moon
patent: 2004/0119925 (2004-06-01), Moon
patent: 2005/0092995 (2005-05-01), Yoo et al.

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