Thin film multi-layer oxygen diffusion barrier consisting of ref

Details Thin film multi-layer oxygen diffusion barrier consisting of ref Thin film multi-layer oxygen diffusion barrier consisting of ref

1995-01-13

1997-04-29

Saadat, Mahshid D.

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

257295, H01L 23482, H01L 2945

Patent

active

056252331

ABSTRACT:
The use of a bi-layer thin film structure consisting of aluminum or aluminide on a refractory metal layer as a diffusion barrier to oxygen penetration at high temperatures for preventing the electrical and mechanical degradation of the refractory metal for use in applications such as a capacitor electrode for high dielectric constant materials.

REFERENCES:
patent: 5015440 (1991-05-01), Bowden
patent: 5313101 (1994-05-01), Harada et al.
patent: 5355020 (1994-10-01), Lee et al.
patent: 5421974 (1995-06-01), Witt
Tantalum as a Diffusion Barrier Between Copper and Silicon: Failure Mechanism and Effect of Nitrogen Additions; Karen Holloway, et al.; J. Appl. Phys. 71 .andgate.11, Jun. 1, 1992, pp. 5433-5444.
Base Electrodes for High Dielectric Constant Oxide Materials in Silicon Technology A. Grill, et al.; J. Mater. Res., vol. 7, No. 12, Dec. 1992, pp. 3260-3265.

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