Thin film multi-layer oxygen diffusion barrier consisting of alu

Details Thin film multi-layer oxygen diffusion barrier consisting of alu Thin film multi-layer oxygen diffusion barrier consisting of alu

1995-06-06

1997-06-17

Gorgos, Kathryn L.

Metal treatment

Process of modifying or maintaining internal physical...

Processes of coating utilizing a reactive composition which...

148285, 148535, 205157, 205159, 205170, 205183, 205186, 205187, 205192, 205193, 205224, 4273835, 4272557, C23C 880, C23C 810, C25D 712, C25D 510

Patent

active

056393164

ABSTRACT:
The use of a bi-layer thin film structure consisting of aluminum or aluminide on a refractory metal layer as a diffusion barrier to oxygen penetration at high temperatures for preventing the electrical and mechanical degradation of the refractory metal for use in applications such as a capacitor electrode for high dielectric constant materials.

REFERENCES:
patent: 3420689 (1969-01-01), Foldes et al.
patent: 3939047 (1976-02-01), Tsunemitsu et al.
Green et al., "Low Pressure Selective Chemical Vapor Deposition of Tungsten", Electrochemical Society Extended Abstracts, vol. 84, No. 2 (no month, 1984), pp. 599-600.
"Tantalum as a Diffusion Barrier Between Copper and Silicon: Failure Mechanism and Effect of Nitrogen Additions" by Karen Holloway, et al.; J. Appl. Phys. 71 #11, Jun. 1, 1992 pp. 5433-5444.
"Base Electrodes for High Dielectric Constant Oxide Materials in Silicon Technology" by A. Grill, et al.; J. Mater. Res., vol. 7, No. 12, Dec. 1992, pp. 3260-3265.

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