Thin film memory with magnetoresistive read-out

Details Thin film memory with magnetoresistive read-out Thin film memory with magnetoresistive read-out

1983-03-21

1984-06-19

Moffitt, James W.

Static information storage and retrieval

Systems using particular element

Magnetoresistive

365 57, G11C 1115

Patent

active

044556268

ABSTRACT:
A radiation-hard, non-volatile, thin film planar RAM structure fabricated by silicon integrated circuit processing. This memory cell construction provides a magnetoresistive readout. A magnetoresistive film sensor is positioned in the gap of a thicker flux concentrator film. A memory film and the flux concentrator film comprise a magnetic path to the MR film.

REFERENCES:
patent: 3016507 (1962-01-01), Grant et al.
patent: 4356523 (1982-10-01), Yeh

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