Thin film memory matrix using amorphous and high resistive layer

Details Thin film memory matrix using amorphous and high resistive layer Thin film memory matrix using amorphous and high resistive layer

1986-04-29

1989-10-24

Moffitt, James W.

Static information storage and retrieval

Systems using particular element

Amorphous

357 2, G11C 1300

Patent

active

048766682

ABSTRACT:
Memory cells in a matrix are provided by a thin film of amorphous semiconductor material overlayed by a thin film of resistive material. An array of parallel conductors on one side perpendicular to an array of parallel conductors on the other side enable the amorphous semiconductor material to be switched in addressed areas to be switched from a high resistance state to a low resistance state with a predetermined level of electrical energy applied through selected conductors, and thereafter to be read out with a lower level of electrical energy. Each cell may be fabricated in the channel of an MIS field-effect transistor with a separate common gate over each section to enable the memory matrix to be selectively blanked in sections during storing or reading out of data. This allows for time sharing of addressing circuitry for storing and reading out data in a synaptic network, which may be under control of a microprocessor.

REFERENCES:
patent: 3271591 (1966-09-01), Ovshinsky
patent: 3846767 (1974-11-01), Cohen
patent: 4660166 (1987-04-01), Hopfield
patent: 4677742 (1987-07-01), Johnson
patent: 4684972 (1987-08-01), Owen et al.
American Institute of Physics Conference Proceedings --vol. 151; pp. 315-320.
American Institute of Physics Conference Proceedings vol. 151; pp. 426-431.
J. Vac. Sci. Technol. A5 (4) Jul./Aug., 1987 pp. 1407-1411.

Affiliated with

Also associated with

Rating

Thin film memory matrix using amorphous and high resistive layer does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Thin film memory matrix using amorphous and high resistive layer, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Thin film memory matrix using amorphous and high resistive layer will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1592914