Thin film magnetic memory device writing data with...

Static information storage and retrieval – Systems using particular element – Magnetoresistive

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C365S066000, C365S171000, C365S173000

Reexamination Certificate

active

07020008

ABSTRACT:
An end of a selected bit line in a selected column is electrically coupled to an end of a corresponding current return line by one of first and second write column select gates, which are selectively turned on in response to results of column selection. A data write circuit sets the other end of the selected bit line and the other end of the current return line to one and the other of a power supply voltage and a ground voltage in accordance with a level of write data via one of first and second data buses and an inverted data bus, respectively.

REFERENCES:
patent: 5748519 (1998-05-01), Tehrani et al.
patent: 6256224 (2001-07-01), Perner et al.
patent: 6445613 (2002-09-01), Nagai
patent: 6487108 (2002-11-01), Pochmuller
patent: 6778430 (2004-08-01), Hidaka
patent: 6781874 (2004-08-01), Hidaka
patent: 6788568 (2004-09-01), Hidaka
patent: 2002/0080643 (2002-06-01), Ito
patent: 2004/0001351 (2004-01-01), Subramanian et al.
patent: 101 33 646 (2002-04-01), None
patent: 102 15 117 (2002-11-01), None
patent: 102 35 424 (2003-03-01), None
patent: 1 152 430 (2001-04-01), None
Scheuerlein et al., “A 10ns Read and Write Non-Volatile Memory Array Using a Magnetic Tunnel Junction and FET Switch in Each Cell”, ISSCC Digest of Technical Papers, TA7.2, Feb. 2000.
Durlam et al., “Nonvolatile RAM based on Magnetic Tunnel Junction Elements”, ISSCC Digest of Technical Papers, TA7.3, Feb. 2000.
Naji et al., “A 256kb 3.0V 1T1MTJ Nonvolatile Magnetoresistive RAM”, ISSCC Digest of Technical Papers, TA7.6, Feb. 2001.
Related U.S. Appl. No. 09/834,638, filed Apr. 16, 2001.
Related U.S. Appl. No. 09/805,043, filed Mar. 14, 2001.
Related U.S. Appl. No. 10/189,528, filed Jul. 8, 2002.
Itoh et al., “Reviews and Prospects of High-Density RAM Technology”, International Semiconductor Conference Proceedings, vol. 1, Oct. 10 to 14, 2000, p. 13-22.
Scheuelein et al., “A 10ns Read and Write Non-Volatile Memory Array Using a Magnetic Tunnel Junction and FET Switch in Each Cell”, IEEE International Solid-State Circuits Conference, Feb. 7-9, 2000, p. 128-129.
Durlam et al., “Non-volatile RAM based on Magnetic Tunnel Junction Elements”, IEEE International Solid-State Circuits Conference, Feb. 7-9, 2000, p. 130-131.
Naji et al., “A 256kb 3.0V 1T1MTJ Non-volatile Magnetoresistive RAM”, IEEE International Solid-State Circuits Conference, Feb. 5-7, 2001, p. 122-123, 438.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Thin film magnetic memory device writing data with... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Thin film magnetic memory device writing data with..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Thin film magnetic memory device writing data with... will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3608530

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.