Thin film magnetic memory device with magnetic tunnel junction

Details Thin film magnetic memory device with magnetic tunnel junction Thin film magnetic memory device with magnetic tunnel junction

2005-03-01

2005-03-01

Phan, Trong (Department: 2818)

Static information storage and retrieval

Systems using particular element

Magnetoresistive

C365S171000, C365S173000

Reexamination Certificate

active

06862209

ABSTRACT:
An access transistor in an MTJ memory cell, which is one of transistors connected to a read current path, is fabricated with a semiconductor layer formed on an insulating film on a semiconductor substrate SUB, and includes impurity regions, a gate region and a body region. That is, the access transistor is fabricated with an SOI (Silicon On Insulator) structure in order to reduce an off-leak current.

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Scheuerlein et al., “A 10ns Read and Write Non-Volatile Memory Array Using a Magnetic Tunnel Junction and FET Switch in Each Cell.” ISSCC Digest of Technical Papers, TA7.2, Feb. 2000, pp 94-95, 128-129, 409-410.
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