Thin film magnetic memory device suppressing resistance of...

Static information storage and retrieval – Systems using particular element – Magnetic thin film

Reexamination Certificate

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C365S157000

Reexamination Certificate

active

06868004

ABSTRACT:
An access transistor ATR in an MTJ memory cell, which is one of transistors connected to a read current path, is constituted with a surface-channel, field-effect transistor. The surface-channel, field-effect transistor has a channel resistance lower than a channel-embedded, field-effect transistor, and can reduce an RC load in the read current path. Accordingly, data can be read with a high speed.

REFERENCES:
patent: 6423584 (2002-07-01), Takahashi et al.
patent: 6614681 (2003-09-01), Hidaka
Roy Scheuerlein et al., “A 10ns Read and Write Non-Volatile Memory Array using a Magnetic Tunnel Junction and FET Switch in Each Cell,” ISSCC Digest of Technical Papers, Feb. 2000, pp. 94-95, 128-129, 409-410, Paper TA 7.2.
M. Durlam, et al., “Nonvolatile RAM based on Magnetic Tunnel Junction Elements,” ISSCC Digest of Technical Papers, Feb. 2000, pp. 96-97, 130-131, 410-411, Paper TA 7.3.
Peter K. Naji et al., “A 256kb 3.0V 1T1MTJ Nonvolatile Magnetoresistive RAM,” ISSCC Digest of Technical Papers, Feb. 2001, pp. 94-95, 122-123, 404-405, 438, Paper TA 7.6.

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