Static information storage and retrieval – Systems using particular element – Magnetic thin film
Reexamination Certificate
2006-05-09
2006-05-09
Tran, Michael (Department: 2827)
Static information storage and retrieval
Systems using particular element
Magnetic thin film
C365S173000
Reexamination Certificate
active
07042761
ABSTRACT:
A write drive circuit provided for every write word line supplies a data write current to a write word line of a selected row, and supplies a magnetic-field canceling current to a write word line of an adjacent row in the opposite direction to that of the data write current. In each write drive circuit, the data write current is supplied in response to turning-ON of first and second driver transistors, and the magnetic-field canceling current is supplied in response to turning-ON of the second driver transistor.
REFERENCES:
patent: 5504699 (1996-04-01), Goller et al.
patent: 5640343 (1997-06-01), Gallagher et al.
patent: 6097625 (2000-08-01), Scheuerlein
patent: 6097626 (2000-08-01), Brug et al.
patent: 6349054 (2002-02-01), Hidaka
patent: 6479848 (2002-11-01), Park et al.
patent: 6501679 (2002-12-01), Hidaka
patent: 6545900 (2003-04-01), Bohm et al.
patent: 6795335 (2004-09-01), Hidaka
patent: 6870757 (2005-03-01), Hidaka
patent: 6873561 (2005-03-01), Ooishi
patent: 6876575 (2005-04-01), Hidaka
patent: 100 53 965 (2000-10-01), None
patent: 102 49 869 (2002-10-01), None
patent: 102 51 218 (2002-11-01), None
patent: 1202284 (2002-05-01), None
Scheuerlein et al., “A 10nx Read and Write Non-Volatile Memory Array Using a Magnetic Tunnel Junction and FET Switch in Each Cell”, ISSCC Digest of Technical Papers, TA7.2, Feb. 2000, pp. 94-95, 128-129, 409-410.
Durlam et al., “Nonvolatile RAM Based on Magnetic Tunnel Junction Elements”, ISSCC Digest of Technical Papers, TA7.3, Feb. 2000, pp. 96-97, 130-131, 410-411.
Naji et al., “A 256kb 3.0V 1T 1MTJ Nonvolatile Magnetoresistive RAM”, ISCCC Digest of Technical Papers, TA7.6, Feb. 2001, pp. 94-95, 122-123, 404-405, 438.
Germany Patent & Trademark Office. German Patent Application No. 103 07 926.2-55. Office Action dated Nov. 10, 2005. Applicant—Mitsubishi Denki K.K. German Language (5 pages).
Germany Patent & Trademark Office. German Patent Application No. 103 07 926.2-55. Office Action dated Nov. 10, 2005. Applicant—Mitsubishi Denki K.K. English Translation (7 pages).
R. J. Petschauer. “Engineering Aspects of Magnetic Film Memories,” IEEE Transactions on Magnetics. vol. MAG-1, No. 3. pp. 185-192. Sep. 1965.
Zhi G. Wang. et al. “Feasibility of Ultra-Dense Spin-Tunneling Random Access Memory.” IEEE Transactions on Magnetics. vol. 33, No. 6. pp. 4498-4512. Nov. 1997.
E. W. Pugh et al. “Device and Array Design for a 120-Nanosecond Magnetic Film Main Memory.” IBM Journal. pp. 169-178. Mar. 1967.
Wolfgang Kayser. “Magnetization Creep in Magnetic Films.” IEEE Transactions on Magnetics. vol. MAG-3, No. 2. pp. 141-157. Jun. 1967.
Buchanan & Ingersoll PC
Renesas Technology Corp.
Tran Michael
LandOfFree
Thin film magnetic memory device suppressing internal... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Thin film magnetic memory device suppressing internal..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Thin film magnetic memory device suppressing internal... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3648768