Static information storage and retrieval – Systems using particular element – Superconductive
Reexamination Certificate
2007-09-18
2007-09-18
Phung, Anh (Department: 2824)
Static information storage and retrieval
Systems using particular element
Superconductive
C365S158000, C365S171000, C365S173000
Reexamination Certificate
active
11099669
ABSTRACT:
After a digit line is charged to a power supply voltage by turn-on of a first switching element, the first switching element is turned off and a second switching element is turned on, whereby the digit line is connected to a ground voltage. Similarly, in order to feed data write current, a bit line is charged to a data voltage in accordance with write data through a third switching element. Then, the bit line is connected to a voltage different from the data voltage by a fourth switching element while the third switching element is turned off. Therefore, a load current from a power supply to an MRAM device is supplied during charging of a digit line capacitance and a bit line capacitance, without being consumed when the data write current flows. Consequently, a peak of the load current supplied from the power supply is suppressed.
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Scheuerlein et al., “A 10ns Read and Write Non-Volatile Memory Array Using a Magnetic Tunnel Junction and FET Switch in Each Cell”, Feb. 2000, TA7.2, IEEE ISSCC Dlgest of Technical Papers.
Durlam et al., “Nonvolatile RAM based on Magnetic Tunnel Junction Elements”, Feb. 2000, TA7.6, IEEE ISSCC Digest of Technical Papers.
Naji et al., “A 256kb 3.0V 1T1MTJ Nonvolatile Magnetoresistive RAM”, Feb. 2001, TA7.6, IEEE ISSCC Digest of Technical Papers.
Durlam et al., “A 1-Mbit MRAM Based on 1T1MTJ Bit Cell Integrated With Copper Interconnects”, IEEE Journal of Solid-State Circuits, May 2003, pp. 769-773, vol. 38, No. 5.
Buchanan & Ingersoll & Rooney PC
Luu Pho M.
Phung Anh
Renesas Technology Corp.
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