Static information storage and retrieval – Read/write circuit – Differential sensing
Reexamination Certificate
2007-06-19
2007-06-19
Hoang, Huan (Department: 2818)
Static information storage and retrieval
Read/write circuit
Differential sensing
C365S107000, C365S210130, C365S158000
Reexamination Certificate
active
10260397
ABSTRACT:
Normal memory cells and dummy cells are arranged continuously in a memory array. In a data read operation, first and second data lines are connected to the selected memory cell and the dummy cell, respectively, and are supplied with operation currents of a differential amplifier. An offset corresponding to a voltage difference between first and second offset control voltages applied from voltage generating circuits are provided between passing currents of the first and second data lines, and a reference current passing through the dummy cell is set to a level intermediate between two kinds of levels corresponding to storage data of a data read current passing through the selected memory cell.
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Hidaka Hideto
Ooishi Tsukasa
Tanizaki Hiroaki
Tsuji Takaharu
Hoang Huan
Mitsubishi Electric Engineering Company Limited
Renesas Technology Corp.
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