Static information storage and retrieval – Systems using particular element – Magnetic thin film
Reexamination Certificate
2011-05-24
2011-05-24
Tran, Andrew Q (Department: 2824)
Static information storage and retrieval
Systems using particular element
Magnetic thin film
C365S171000, C365S158000, C365S066000, C365S063000, C365S189140, C365S189160
Reexamination Certificate
active
07948795
ABSTRACT:
In the data read operation, a memory cell and a dummy memory cell are respectively coupled to two bit lines of a selected bit line pair, a data read current is supplied. In the selected memory cell column, a read gate drives the respective voltages on a read data bus pair, according to the respective voltages on the bit lines. A data read circuit amplifies the voltage difference between the read data buses so as to output read data. The use of the read gate enables the read data buses to be disconnected from a data read current path. As a result, respective voltage changes on the bit lines are rapidly produced, and therefore, the data read speed can be increased.
REFERENCES:
patent: 5173873 (1992-12-01), Wu et al.
patent: 5274595 (1993-12-01), Seok et al.
patent: 5283760 (1994-02-01), Chin et al.
patent: 5341331 (1994-08-01), Jeon
patent: 5515323 (1996-05-01), Yamazaki et al.
patent: 5640343 (1997-06-01), Gallagher et al.
patent: 5650958 (1997-07-01), Gallagher et al.
patent: 5666314 (1997-09-01), Akaogi et al.
patent: 5734605 (1998-03-01), Zhu et al.
patent: 5835314 (1998-11-01), Moodera et al.
patent: 5841692 (1998-11-01), Gallagher et al.
patent: 5903512 (1999-05-01), Wong et al.
patent: 5917749 (1999-06-01), Chen et al.
patent: 5946227 (1999-08-01), Naji
patent: 5959880 (1999-09-01), Shi et al.
patent: 6335890 (2002-01-01), Reohr et al.
patent: 6349054 (2002-02-01), Hidaka
patent: 6360953 (2002-03-01), Lin et al.
patent: 6480437 (2002-11-01), Kato et al.
patent: 6611455 (2003-08-01), Sekiguchi et al.
patent: 6778428 (2004-08-01), Joo
patent: 6791876 (2004-09-01), Tanizaki et al.
patent: 6972991 (2005-12-01), Hidaka
patent: 7006391 (2006-02-01), Hidaka
patent: 7042761 (2006-05-01), Hidaka
patent: 7307896 (2007-12-01), Doyle et al.
patent: 7489001 (2009-02-01), Hidaka
patent: 7489577 (2009-02-01), Sato et al.
patent: 2008/0117670 (2008-05-01), Hidaka
patent: 101 19 499 (2002-04-01), None
patent: 101 23 332 (2002-11-01), None
patent: 10-106255 (1998-04-01), None
patent: 11-039858 (1999-02-01), None
patent: 2000-315383 (2000-11-01), None
patent: WO 00/08650 (2000-02-01), None
Sinclair et al.; “A Practical 256K GMR NV Memory for High Shock Applications”;International NonVolatile Memory Technology Conference; IEEE;c. 1998; pp. 38-42.
Scheuerlein; Magneto-Resistive IC Memory Limitations; and Architecture Implications;International NonVolatile Memory Technology Conference; IEEE; c. 1998; pp. 47-50.
Scheuerlein et al.; “A 10ns Read and Write Non-Volatile Memory Array Using a Magnetic Tunnel Junction and FET Switch in each Cell”, IEEE International Solid State Circuits Conference, Feb. 7-9, 2000, ISSCC Digest of Technical Papers, TA7.2, Feb. 2000, pp. 128-129, 94-95 & 409-410.
Durlam et al.; “Nonvolatile RAM based on Magnetic Tunnel Junction Elements”, IEEE International Solid-State Circuits conference, Feb. 7-9, 2000, ISSCC Digest of Technical Papers, TA7.3, Feb. 2000, pp. 130-131, 76-97 and 410-411.
Japanese Notice of Grounds of Rejection, w/ English translation thereof, issued in Japanese Patent Application No. JP 2000-393213 dated Jul. 27, 2010.
McDermott Will & Emery LLP
Renesas Electronics Corporation
Tran Andrew Q
LandOfFree
Thin film magnetic memory device including memory cells... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Thin film magnetic memory device including memory cells..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Thin film magnetic memory device including memory cells... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2675534