Static information storage and retrieval – Systems using particular element – Magnetic thin film
Reexamination Certificate
2006-09-19
2006-09-19
Zarabian, Amir (Department: 2827)
Static information storage and retrieval
Systems using particular element
Magnetic thin film
C365S158000, C365S200000, C365S210130, C365S225500, C365S066000
Reexamination Certificate
active
07110288
ABSTRACT:
Normal memory cells are arranged in rows and columns, and dummy memory cells are arranged to form dummy memory cell rows by sharing memory cell columns with the normal memory cells. When there is at least one defect in the normal memory cells and/or the dummy memory cells, replacement/repair is carried out using a redundant column in a unit of memory cell column. The redundant column includes not only spare memory cells for repair of the normal memory cells but also spare dummy memory cells for repair of the dummy memory cells.
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McDermott Will & Emery LLP
Pham Ly Duy
Renesas Technology Corp.
Zarabian Amir
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