Thin film magnetic memory device having dummy cell

Details Thin film magnetic memory device having dummy cell Thin film magnetic memory device having dummy cell

2005-02-15

2005-02-15

Phan, Trong (Department: 2818)

Static information storage and retrieval

Systems using particular element

Magnetoresistive

C365S171000, C365S173000

Reexamination Certificate

active

06856537

ABSTRACT:
A dummy cell has a plurality of dummy magneto-resistance elements which have the same characteristic as a magneto-resistance element, which characteristic changes corresponding to a voltage applied to the opposite ends. In addition, a voltage applied to opposite ends of each dummy magneto-resistance element is made smaller than a voltage applied to opposite ends of a magneto-resistance element of a memory cell. With this, the dummy cell is designed so as to have an intermediate electric resistance between first and second electric resistances.

REFERENCES:
patent: 5894447 (1999-04-01), Takashima
patent: 6055178 (2000-04-01), Naji
patent: 6382823 (2002-05-01), Naji
patent: 6466475 (2002-10-01), Nickel
patent: 6504752 (2003-01-01), Ito
patent: 6587371 (2003-07-01), Hidaka
“A 10ns Read and Write Non-Volatile Memory Array Using a Magnetic Tunnel Junction and FEI Switch in Each Cell”, Scheuerlein et al., ISSCC Digest of Technical Papers, TA 7.2, Feb. 2000, pp. 94-95, 128-129, 409-410.
“Nonvolatile RAM based on Magnetic Tunnel Junction Elements”, Durlam et al., ISSCC Digest of Technical Papers, TA 7.3, Feb. 2000, pp. 96-97, 130-131, 410-411.
“A 256kb 3.0V 1T1MTJ Nonvolatile Magnetoresistive RAM”, Naji et al., ISSCC Digest of Technical Papers, TA 7.6, Feb. 2001, pp. 94-95, 122-123, 404-405, 438.

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