Static information storage and retrieval – Systems using particular element – Magnetoresistive
Reexamination Certificate
2005-03-08
2005-03-08
Lam, David (Department: 2818)
Static information storage and retrieval
Systems using particular element
Magnetoresistive
C365S171000, C365S200000
Reexamination Certificate
active
06865103
ABSTRACT:
In data write operation, a data write current starts being supplied to a write word line of the selected row at a first time without waiting for redundant determination. A data write current starts being supplied to a bit line or sub bit line of the selected column at a second time that is later than the first time according to the redundant determination result. The redundant determination is conducted between the first and second times. The data write currents flowing through the write word line and the bit line generate magnetic fields of the hard-axis and easy-axis directions for the selected memory sell, respectively.
REFERENCES:
patent: 6385111 (2002-05-01), Tran et al.
patent: 6477081 (2002-11-01), Poechmueller
Scheuerlein et al., “A 10ns Read and Write Non-Volatile Memory Array Using a Magnetic Tunnel Junction and FET Switch in Each Cell”, ISSCC Digest of Technical Papers, TA7.2, Feb. 2000, pp. 94-95, 128-129, 409-410.
Durlam et al., “Nonvolatile RAM based on Magnetic Tunnel Junction Elements”, ISSCC Digest of Technical Papers, TA7.3, Feb. 2000, pp. 96-97, 130-131, 410-411.
Naji et al., “A 256kb 3.0V 1T1MTJ Nonvolatile Magnetoresistive RAM”, ISSCC Digest of Technical Papers, TA7.6, Feb. 2001, pp. 94-95, 122-123, 404-405, 438.
Lam David
Mitsubishi Denki & Kabushiki Kaisha
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