Static information storage and retrieval – Read/write circuit – Differential sensing
Reexamination Certificate
2006-10-03
2006-10-03
Lam, David (Department: 2827)
Static information storage and retrieval
Read/write circuit
Differential sensing
C365S158000, C365S171000
Reexamination Certificate
active
07116595
ABSTRACT:
Bit lines and source lines are precharged to a power supply voltage before data read operation. In the data read operation, a corresponding bit line is coupled to a data bus as well as a corresponding source line is driven to a ground voltage only in the selected memory cell column. In the non-selected memory cell columns, the bit lines and the source lines are retained at the precharge voltage, i.e., the power supply voltage. No charging/discharging current is produced in the bit lines of the non-selected memory cell columns, that is, a charging/discharging current that does not directly contribute the data read operation is not produced, thereby allowing for reduction in power consumption in the data read operation.
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Lam David
McDermott Will & Emery LLP
Renesas Technology Corp.
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