Thin film magnetic memory device having a highly integrated...

Static information storage and retrieval – Systems using particular element – Magnetoresistive

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C365S171000, C365S230040

Reexamination Certificate

active

07133310

ABSTRACT:
Read word lines and write word lines are provided corresponding to the respective MTJ (Magnetic Tunnel Junction) memory cell rows, and bit lines and reference voltage lines are provided corresponding to the respective MTJ memory cell columns. Adjacent MTJ memory cells share at least one of these signal lines. As a result, the pitches of signal lines provided in the entire memory array can be widened. Thus, the MTJ memory cells can be efficiently arranged, achieving improved integration of the memory array.

REFERENCES:
patent: 3849768 (1974-11-01), Durvasula
patent: 5276650 (1994-01-01), Kubota
patent: 5323344 (1994-06-01), Katayama et al.
patent: 5619447 (1997-04-01), Tai
patent: 5640343 (1997-06-01), Gallagher et al.
patent: 5650958 (1997-07-01), Gallagher et al.
patent: 5734605 (1998-03-01), Zhu et al.
patent: 5835314 (1998-11-01), Moodera et al.
patent: 5946227 (1999-08-01), Naji
patent: 6055178 (2000-04-01), Naji
patent: 6081452 (2000-06-01), Ohta
patent: 6111781 (2000-08-01), Naji
patent: 6278631 (2001-08-01), Naji
patent: 6301158 (2001-10-01), Iwahashi
patent: 6349054 (2002-02-01), Hidaka
patent: 6351410 (2002-02-01), Nakao et al.
patent: 6359805 (2002-03-01), Hidaka
Scheuerlein, et al. “A 10ns Read and Write Non-Volatile Memory Array Using a Magnetic Tunnel Junction and FET Switch in Each Cell”, ISSCC Digest of Technical Papers, TA7.2, Feb. 2000, pp. 128-129, 94-95 and 409.
Durlam et al., “Nonvolatile RAM Based on Magnetic Tunnel Junction Elements”, ISSCC Digest of Technical Papers, TA7.3, Feb. 2000, pp. 130-131, 96-97, 410-411.
Scheuerlein, Roy E. et al., “Shared Word Line DRAM Cell”, IEEE Journal of Solid-State Circuits, vol. 19, No. 5, Oct. 1984, pp. 640-645.
Tehrani, S. et al., “Recent Developments in Magnetic Tunnel Junction MRAM”, IEEE Transactions on Magnetics, vol. 36, No. 5, Sep. 2000, pp. 2752-2757.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Thin film magnetic memory device having a highly integrated... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Thin film magnetic memory device having a highly integrated..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Thin film magnetic memory device having a highly integrated... will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3677478

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.