Static information storage and retrieval – Systems using particular element – Magnetic thin film
Reexamination Certificate
2006-07-04
2006-07-04
Zarabian, Amir (Department: 2827)
Static information storage and retrieval
Systems using particular element
Magnetic thin film
C365S066000, C365S158000, C365S173000, C365S230030, C365S230060, C365S230070, C365S232000
Reexamination Certificate
active
07072207
ABSTRACT:
For writing K-bit write data in parallel (K is integer at least 2), bit lines each arranged for each memory cell columns and at least K current return lines are provided. K selected bit lines to write the K-bit write data are connected in series in a single current path. When data having different levels are written through adjacent selected bit lines, the selected bit lines are connected to each other at their one ends or the other ends, so that a bit line write current flowing through the former selected bit line is directly transmitted to the latter selected bit line. On the other hand, when data having the same level are written through adjacent selected bit lines, a bit line write current flowing through the former selected bit line is turned back by the corresponding current return line, and then transmitted to the latter selected bit line.
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McDermott Will & Emery LLP
Pham Ly Duy
Renesas Technology Corp.
Zarabian Amir
LandOfFree
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