Static information storage and retrieval – Systems using particular element – Superconductive
Reexamination Certificate
2006-01-17
2006-01-17
Le, Thong (Department: 2818)
Static information storage and retrieval
Systems using particular element
Superconductive
C365S171000
Reexamination Certificate
active
06987690
ABSTRACT:
A program unit includes two program cells having an electric resistance varying according to a magnetization direction thereof. These program cells are magnetized in the same direction in initial state, that is, non-program state. In program state, the magnetization direction of one of the program cells selected according to program data is changed from the initial state. One-bit program data and information of whether the program unit stores program data or not can be read based on two program signals generated according to the electric resistances of the two program cells.
REFERENCES:
patent: 5751627 (1998-05-01), Ooishi
patent: 6324093 (2001-11-01), Perner et al.
patent: 6331943 (2001-12-01), Naji et al.
patent: 6343032 (2002-01-01), Black et al.
patent: 6646911 (2003-11-01), Hidaka
patent: 2002/0009003 (2002-01-01), Hartmann
patent: 2002/0057594 (2002-05-01), Hiral
patent: 100 34062 (2002-01-01), None
patent: 102 28 560 (2003-05-01), None
patent: 1 189 239 (2001-09-01), None
patent: WO 01/54279 (2001-07-01), None
patent: WO 99/1 253 651 (2002-10-01), None
“A 10 ns Read and Write Non-Volatile Memory Array Using a Magnetic Tunnel Junction and FET Switch in Each Cell”, Scheuerlein et al., ISSCC Digest of Technical Papers, TA7.2, Feb. 2000, pp. 94-95, 128-129, 409-410.
“Nonvolatile RAM based on Magnetic Tunnel Junction Elements”, Durlam et al., ISSCC Digest of Technical Papers, TA7.3, Feb. 2000, pp. 96-97, 130-131, 410-411.
A 256kb 3.0V 1T1MTJ Nonvolatile Magnetoresistive RAM, Naji et al., ISSCC Digest of Technical Papers, TA7.6, Feb. 2001, pp. 94-95, 122-123, 404-405, 438.
Scheuerlein, R., et al., “A 10ns read and write non-volatile memory array using a magnetic tunhnel junction and FET switch in each cell” IEEE International Solid-State Circuits Conference, Feb. 7-9, 2000, pp. 128-129.
Durlam, M., et al., “Nonvolatile RAM based on magnetic tunnel junction elements” IEEE International Solid-State Circuits Conference, Feb. -9, 2000, pp. 130-131.
Naji, P., et al., “A 256kb 3.0V 1T1MTJ nonvolatile magnetoresistive RAM” IEEE International Solid-State Circuits Conference, Feb. 7-9, 2001, pp. 122-123, 438.
Wee, J., et al., “An antifuse EPROM circuitry scheme for field-programmable repair in DRAM” IEEE Journal of Solid-State Circuits, vol. 35, No. 10, Oct. 2000, pp. 1408-1414.
Black, W., et al., “Programmable logic using giant-magnetoresistance and spin-dependent tunneling devices (invited)” Journal of Applied Physics, vol. 87, No. 9, May 2000, pp. 6647-6679.
Le Thong
McDermott Will & Emery LLP
Renesas Technology Corp.
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