Static information storage and retrieval – Systems using particular element – Magnetoresistive
Reexamination Certificate
2007-06-19
2007-06-19
Tran, Michael (Department: 2827)
Static information storage and retrieval
Systems using particular element
Magnetoresistive
C365S161000
Reexamination Certificate
active
11233073
ABSTRACT:
A peripheral circuitry is provided adjacent to a memory array and conducts read and write operations from and to the memory array. A power supply voltage line and a ground line for supplying an operating voltage to the peripheral circuitry supply a power supply voltage and a ground voltage, respectively. The power supply voltage line and the ground line are arranged so that a magnetic field generated by a current flowing through the power supply voltage line and a magnetic field generated by a current flowing through the ground line cancel each other in the memory array.
REFERENCES:
patent: 3456247 (1969-07-01), English
patent: 5136239 (1992-08-01), Josephs
patent: 5939725 (1999-08-01), Muraki
patent: 6349054 (2002-02-01), Hidaka
patent: 6404671 (2002-06-01), Reohr et al.
patent: 6646911 (2003-11-01), Hidaka
patent: 6683807 (2004-01-01), Hidaka
patent: 6778430 (2004-08-01), Hidaka
patent: 6788568 (2004-09-01), Hidaka
patent: 7042761 (2006-05-01), Hidaka
patent: 2001/0048608 (2001-12-01), Numata et al.
patent: 2002/0176272 (2002-11-01), DeBrosse et al.
patent: 1 524 770 (1970-05-01), None
patent: 100 53 965 (2002-06-01), None
patent: 102 28 560 (2003-05-01), None
Scheuerlein, et al., “A 10 NS Read and Write Non-Volatile Memory Array Using a Magnetic Tunnel Junction and FET Switch in Each Cell”, IEEE International Solid-State Circuits Conference, Feb. 7-9, 2000, 128-129.
Durlam et al., “Nonvolatile RAM Based on Magnetic Tunnel Junction Elements”, IEEE International Solid-State Circuits Conference, Feb. 7-9, 2000, 130-131.
Naji et al., “A 256 KB 3.0 V 1T1MTJ Nonvolatile Magnetoresistive RAM” IEEE International Solid-State Circuits Conference, Feb. 5-7, 2001, 122-123, 438.
Petschauer, R. “Engineering Aspects of Magnetic Film Memories” IEEE Transactions on Magnetics, Bd. 1, Nr. 3, Sep. 1965, 185-192.
Wang et al. “Feasibility of Ultra-Dense Spin-Tunnelling Random Access Memory” IEEE Transactions on Magnetics, Bd. 33 Nr. 6, Nov. 1997, 4498-4512.
Brown et al., “One Megabit Memory Chip Using Giant Magnetoresistive Memory Cells” Nonvolatile Memory Technology Review, 1993, Jun. 22-24, 1993, 60-53.
McDermott Will & Emery LLP
Renesas Technology Corp.
Tran Michael
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