Thin film magnetic memory device executing self-reference...

Details Thin film magnetic memory device executing self-reference... Thin film magnetic memory device executing self-reference...

2005-01-11

2005-01-11

Yoha, Connie C. (Department: 2818)

Static information storage and retrieval

Systems using particular element

Magnetic thin film

C365S189011, C365S189040, C365S189070, C365S209000

Reexamination Certificate

active

06842366

ABSTRACT:
In one data read operation, data read for reading stored data before and after a predetermined data write magnetic field is applied to a selected memory cell, respectively, is executed, and the data read is executed in accordance with comparison of voltage levels corresponding to the data read operations before and after application of the predetermined data write magnetic field. In addition, data read operations before and after the application of a data write magnetic field are executed using read modify write. It is thereby possible to avoid an influence of an offset or the like resulting from manufacturing irregularities in respective circuits forming a data read path, to improve efficiency of the data read operation with accuracy and to execute a high rate data read operation.

REFERENCES:
patent: 5943286 (1999-08-01), Orita
patent: 6055178 (2000-04-01), Naji
patent: 6317376 (2001-11-01), Tran et al.
patent: 2000-163950 (2000-06-01), None

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