Static information storage and retrieval – Systems using particular element – Magnetoresistive
Reexamination Certificate
2005-06-07
2005-06-07
Hoang, Huan (Department: 2818)
Static information storage and retrieval
Systems using particular element
Magnetoresistive
C365S171000, C365S173000
Reexamination Certificate
active
06903963
ABSTRACT:
A tunneling magneto-resistance element forming an MTJ memory cell has an elongated form having an aspect ratio larger than one for stabilizing the magnetization characteristics. Bit lines and write word lines for carrying data write currents are arranged along short and long sides of the tunneling magneto-resistance element, respectively. The data write current flowing through the bit line, which can easily have an interconnection width, is designed to be larger than the data write current flowing through the write word line. For example, a distance between the write word line and the tunneling magneto-resistance element is smaller than a distance between the bit line and the tunneling magneto-resistance element.
REFERENCES:
patent: 6215707 (2001-04-01), Moyer
patent: 6317376 (2001-11-01), Tran et al.
Hideto Hidaka, “Thin Film Magnetic Memory Device Capable Of Reducing Number Of Wires And Reading Data at High Speed” U.S. patent application No. 09/834,638, filed Apr. 16, 2001.
Hideto Hidaka “Thin Film Magnetic Memory Device Having A Magnetic Tunnel Junction” U.S. patent application No. 09/982,936, filed Oct. 22, 2001.
Scheuerlein, et al. “A 10ns Read and Write Non-Volatile Memory Array Using a Magnetic Tunnel Junction and FET Switch in Each Cell” ISSCC Digest of Technical Paper, TA7.2, Feb. 8, 2000, pp. 94-95, 128-129 and 409-410.
Durlam, et al, “Nonvolatile RAM Based on Magnetic Tunnel Junction Elements” ISSCC Digest of Technical Papers, TA7.3, Feb. 8, 2000, pp. 96-97, 130-131 and 410-411.
Naji, et al, “A 256kb 3.0V 1T1MTJ Nonvolatile Magnetoresistive RAM” ISSCC Digest of Technical Papers, TA7.6, Feb. 6, 2001, pp. 94-95, 122-123, 404-405 and 438.
Hoang Huan
McDermott Will & Emery LLP
Renesas Technology Corp.
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