Thin film magnetic memory device conducting read operation...

Details Thin film magnetic memory device conducting read operation... Thin film magnetic memory device conducting read operation...

2005-01-04

2005-01-04

Tran, M. (Department: 2818)

Static information storage and retrieval

Systems using particular element

Magnetic thin film

C326S039000

Reexamination Certificate

active

06839272

ABSTRACT:
Bit lines are provided corresponding to columns of MTJ memory cells. Word lines serving as read selection lines and write digit lines serving as write selection lines are provided corresponding to rows of MTJ memory cells. A word line decoder and a digit line decoder are independently provided for the word lines and the write digit lines. The word line decoder selectively activates a word line according to a read address applied to a read port. The digit line decoder selectively activates a write digit line according to a write address applied to a write port.

REFERENCES:
patent: 6314020 (2001-11-01), Hansen et al.
patent: 6642744 (2003-11-01), Or-Bach et al.
Scheuerlein et al., “A 10ns Read and Write Non-Volatile Memory Array Using a Magnetic Tunnel Junction and FET Switch in Each Cell”, ISSCC Digest of Technical Papers, TA7.2, Feb. 2000, pp. 94,95, 128-129, 409-410.
Durlam et al., “Nonvolatile RAM based on Magnetic Tunnel Junction Elements”, ISSCC Digest of Technical Papers, TA7.3, Feb. 2000, pp. 96-97, 130-131, 410-411.
Naji et al., “A 256kb 3.0V 1T1MTJ Nonvolatile Magnetoresistive RAM”, ISSCC Digest of Technical Papers, TA7.6, Feb. 2001, pp. 94-95, 122-123, 404-405, 438.

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