Static information storage and retrieval – Systems using particular element – Magnetoresistive
Reexamination Certificate
2005-07-26
2005-07-26
Ho, Hoai (Department: 2827)
Static information storage and retrieval
Systems using particular element
Magnetoresistive
C365S055000, C365S066000, C365S173000, C365S182000, C365S189090, C365S210130
Reexamination Certificate
active
06922355
ABSTRACT:
A tunnel magnetic resistive element forming a magnetic memory cell includes a fixed magnetic layer having a fixed magnetic field of a fixed direction, a free magnetic layer magnetized by an applied magnetic field, and a tunnel barrier that is an insulator film provided between the fixed and free magnetic layers in a tunnel junction region. In the free magnetic layer, a region corresponding to an easy axis region having characteristics desirable as a memory cell is used as the tunnel junction region. A hard axis region having characteristics undesirable as a memory cell is not used as a portion of the tunnel magnetic resistive element.
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Ho Hoai
McDermott Will & Emery LLP
Pham Ly Duy
Renesas Technology Corp.
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