Static information storage and retrieval – Systems using particular element – Magnetoresistive
Reexamination Certificate
2005-03-22
2005-03-22
Mai, Son (Department: 2818)
Static information storage and retrieval
Systems using particular element
Magnetoresistive
C365S171000, C365S173000
Reexamination Certificate
active
06870757
ABSTRACT:
Each write word line has one end connected by a write drive circuit to a power supply voltage selectively and the other end to a ground voltage. The write drive circuit is staggered in arrangement and thus connected to either one or the other end of each write word line. A write drive circuit has a first transistor and a second transistor. When a memory cell row corresponding to the write drive circuit is selected the first transistor connects a corresponding write word line to the power supply voltage to supply a data writing current and when an adjacent row is selected the transistor connects the corresponding write word line to the power supply voltage. The second transistor passes a magnetic field canceling current, which cancels a magnetic field leaking from a data writing current of an adjacent row.
REFERENCES:
patent: 5838609 (1998-11-01), Kuriyama
patent: 6349054 (2002-02-01), Hidaka
patent: 6404673 (2002-06-01), Matsui
patent: 6490217 (2002-12-01), DeBrosse et al.
patent: 6504752 (2003-01-01), Ito
patent: 6577527 (2003-06-01), Freitag et al.
patent: 10-2001-0067421 (2001-10-01), None
Scheuerlein et al., “A 10ns Read and Write Non-Volatile Memory Array Using a Magnetic Tunnel Junction and FET Switch in Each Cell”, ISSCC Digest of Technical Papers, TA7.2, Feb. 2000, pp. 94-95, 128-129, 409-410.
Durlam et al., “Nonvolatile RAM based on Magnetic Tunnel Junction Elements”, ISSCC Digest of Technical Papers, TA7.3, Feb. 2000, 96-97, 130-131, 410-411.
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Related U.S. patent application Ser. No. 09/982,936, filed Oct. 22, 2001 (Our Ref. 57454-224).
Related U.S. patent application Ser. No. 10/166,784, filed Jun. 12, 2002 (Our Ref. 57454-596).
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