Static information storage and retrieval – Systems using particular element – Magnetoresistive
Reexamination Certificate
2007-12-25
2007-12-25
Ho, Hoai V. (Department: 2827)
Static information storage and retrieval
Systems using particular element
Magnetoresistive
C365S173000
Reexamination Certificate
active
11188089
ABSTRACT:
Shape dummy cells that are designed to have the same dimensions and structures as MTJ memory cells are additionally provided in the peripheral portion of an MTJ memory cell array in which normal MTJ memory cells for storing data are arranged in a matrix. The MTJ memory cells and the shape dummy cells are sequentially arranged so as to have a uniform pitch throughout the entirety. Accordingly, non-uniformity between MTJ memory cells in the center portion and in border portions of the MTJ memory cell array, respectively, after manufacture due to high and low densities of the surrounding memory cells can be eliminated.
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Chinese Office Action issued in Chinese Application No. CN 031487629, dated Mar. 30, 2007.
Ho Hoai V.
McDermott Will & Emery LLP
Renesas Technology Corp.
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