Thin film magnetic memory device and semiconductor...

Details Thin film magnetic memory device and semiconductor... Thin film magnetic memory device and semiconductor...

2005-08-09

2005-08-09

Ho, Hoai (Department: 2827)

Static information storage and retrieval

Read/write circuit

Differential sensing

C365S158000, C365S171000, C365S173000, C365S230030

Reexamination Certificate

active

06928015

ABSTRACT:
Shape dummy cells that are designed to have the same dimensions and structures as MTJ memory cells are additionally provided in the peripheral portion of an MTJ memory cell array in which normal MTJ memory cells for storing data are arranged in a matrix. The MTJ memory cells and the shape dummy cells are sequentially arranged so as to have a uniform pitch throughout the entirety. Accordingly, non-uniformity between MTJ memory cells in the center portion and in border portions of the MTJ memory cell array, respectively, after manufacture due to high and low densities of the surrounding memory cells can be eliminated.

REFERENCES:
patent: 6104633 (2000-08-01), Abraham et al.
patent: 6317376 (2001-11-01), Tran et al.
patent: 6324093 (2001-11-01), Perner et al.
patent: 6795335 (2004-09-01), Hidaka
“A 10ns Read and Write Non-Volatile Memory Array Using a Magnetic Tunnel Junction and FET Switch in Each Cell”, Scheuerlein et al., IEEE ISSCC Digest of Technical Papers, TA7.2, Feb. 2000, pp. 94-95, 128-129, 409-410.
“Nonvolatile RAM based on Magnetic Tunnel Junction Elements”, Durlam et al., IEEE ISSCC Digest of Technical Papers, TA 7.3, Feb. 2000,pp. 96-97, 130-131, 410-411.

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