Thin film load structure

Details Thin film load structure Thin film load structure

1996-09-30

1998-06-09

Nelms, David C.

Static information storage and retrieval

Systems using particular element

Flip-flop

365174, 257530, 257379, G11C 1100

Patent

active

057645639

ABSTRACT:
A resistive load structure and method for making a resistive load structure for an integrated circuit includes the use of an amorphous silicon "antifuse" material. The resistive load structure can be used in an SRAM cell to provide a load to counteract charge leakage at the drains of two pull-down transistors and two pass transistors of the SRAM cell. The resistive load structure is advantageously formed by depositing an amorphous silicon pad over a conductive via, and the resistance of the resistive load structure is controlled by adjusting the thickness of the amorphous silicon pad and varying the diameter of the underlying conductive via.

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