Thin-film forming method using silane and an oxidizing gas

Details Thin-film forming method using silane and an oxidizing gas Thin-film forming method using silane and an oxidizing gas

2007-01-03

2008-11-04

Geyer, Scott B. (Department: 2812)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

C257SE21278

Reexamination Certificate

active

07446060

ABSTRACT:
Disclosed is a film-forming method, comprising supplying into a plasma processing chamber at least three kinds of gases including a silicon compound gas, an oxidizing gas, and a rare gas, the percentage of the partial pressure of the rare gas (Pr) based on the total pressure being not smaller than 85%, i.e., 85%≦Pr<100%, and generating a plasma within the plasma processing chamber so as to form a film of silicon oxide on a substrate to be processed.

REFERENCES:
patent: 2002/0187656 (2002-12-01), Tan et al.
patent: 1156897 (1997-08-01), None
patent: 1336010 (2002-02-01), None
patent: 11-279773 (1999-10-01), None
U.S. Appl. No. 10/821,843, filed Apr. 12, 2004, which is co-pending.
M. Goto, et al. “Surface Wave Plasma Oxidation at Low Temperature for Gate Insulator of Poly-Si TFTs,” Proceedings of The Ninth International Display Workshops, Dec. 4-6, 2002, pp. 355-358.
Reiji Morioka, et al, “Deposition of High-KZirconium Oxides in VHF Plasma-Enhanced CVD Using Metal-Organic Precursor”, Collection of Lecture Documents of the “20thPlasma Processing Research Meeting” sponsored by Plasma Electronics Branch of Applied Physics Institute, Jan. 29, 2003, pp. 317-318.
M. Goto, et al, The Japan Society of Applied Physics, “Surface Wave Plasma Oxidation at Low Temperature Under Rare Gas Dilution”, 2003, vol. 42, Part 1, No. 11, pp. 7033-7038.

Affiliated with

Also associated with

Rating

Thin-film forming method using silane and an oxidizing gas does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Thin-film forming method using silane and an oxidizing gas, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Thin-film forming method using silane and an oxidizing gas will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4027670